Datasheet Details
| Part number | IRF342 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 42.92 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet |
 IRF342 Datasheet
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| Part number | IRF342 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 42.92 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet |
IRF342 Datasheet
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·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speeds ·IDSS,VDS(on),SOA and VGS(th) specified at Elevated temperature ·Rugged APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 400 ±20 V V Drain Current-continuous@ TC=25℃ 8.3 A Total Dissipation@TC=25℃ 125 W Max.
Operating Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-A Thermal Resistance,Junction to Ambient 30 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF342 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0;
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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IRF342 | N-Channel Power MOSFETs | ART CHIP |
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IRF342 | N-Channel Power MOSFET | Fairchild Semiconductor |
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IRF342 | N-Channel Power MOSFET | Samsung semiconductor |
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