Datasheet Details
| Part number | IRF352 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 42.25 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet |
 IRF352 Datasheet
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| Part number | IRF352 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 42.25 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet |
IRF352 Datasheet
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·silicon Gate for fast switching at elevate ·rugged APPLICATIONS ·high voltage,high speed applications such as off-line Switching power supplies,AC and DCmotor controls relay and solenoid driver.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 400 ±20 V V Drain Current-continuous@ TC=25℃ 13 A Total Dissipation@TC=25℃ 150 W Max.
Operating Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient 0.83 30 ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0;
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IRF352 | N-Channel Power MOSFET | Fairchild Semiconductor |
 |
IRF352 | N-Channel Power MOSFET | Samsung semiconductor |
| Part Number | Description |
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