Datasheet Details
| Part number | IRF360 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 41.70 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet |
 IRF360 Datasheet
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| Part number | IRF360 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 41.70 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet |
IRF360 Datasheet
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·silicon Gate for fast switching at elevate ·rugged APPLICATIONS ·suited for applications such as Switching power supplies,motor controls ,inverters, Choppers,audio amplifiers and high energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 400 ±20 V V Drain Current-continuous@ TC=25℃ 25 A Total Dissipation@TC=25℃ 300 W Max.
Operating Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient 0.42 30 ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0;
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IRF360 | N-Channel Power MOSFET | International Rectifier |
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|---|---|
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