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IRF433 Datasheet N-Channel MOSFET Transistor

Manufacturer: Inchange Semiconductor

General Description

·silicon Gate for fast switching at elevate ·rugged ·low drive requirements ·ease of paralleling APPLICATIONS ·high speed applications such as Switching power supplies,AC and DCmotor controls relay and solenoid driver.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 450 ±20 V V Drain Current-continuous@ TC=25℃ 4.0 A Total Dissipation@TC=25℃ 75 W Max.

Operating Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient 0.83 30 ℃/W ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0;

Overview

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product.