IRF533 Key Features
- Low RDS(on) -VGS Rated at ±20V -Silicon Gate for Fast Switching Speed -Rugged -Low Drive Requirements
- DESCRITION -Designed especially for high voltage,high speed
- Part: IRF533
- Manufacturer: Inchange Semiconductor (official site)
- Size: 39.26 KB
Other IRF533 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Fairchild |
IRF533 | N-Channel Power MOSFET |
Motorola Semiconductor |
IRF533 | N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Samsung Semiconductor |
IRF533 | N-Channel Power MOSFET |
Harris Corporation |
IRF533 | (IRF530 - IRF533) N-Channel Power MOSFETs Avalanche Energy Rated |
|
Harris Corporation |
IRF533R | N-Channel MOSFET |
IRF533 Description
INCHANGE Semiconductor isc N-Channel Mosfet Transistor.