Click to expand full text
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF640
DESCRIPTION ·Drain Current –ID= 18A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.18Ω(Max) ·Fast Switching Speed ·Low Drive Requirement
APPLICATIONS ·Designed for low voltage, high speed power switching
applications such as switching regulators, converters, solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
200 V
VGS Gate-Source Voltage
±20
V
ID Drain Current-continuous@ TC=25℃ 18 A
Ptot Total Dissipation@TC=25℃
125 W
Tj Max.
IRF640 Datasheet
