Datasheet4U Logo Datasheet4U.com

IRF640FI - N-Channel Mosfet Transistor

Description

purpose applications.

Features

  • Low RDS(on) = 0.180Ω(TYP).
  • Lower Input Capacitance.
  • Improved Gate Charge.
  • Extended Safe Operating Area.
  • Rugged Gate Oxide Technology.

📥 Download Datasheet

Datasheet preview – IRF640FI

Datasheet Details

Part number IRF640FI
Manufacturer Inchange Semiconductor
File Size 60.17 KB
Description N-Channel Mosfet Transistor
Datasheet download datasheet IRF640FI Datasheet
Additional preview pages of the IRF640FI datasheet.

📁 Similar Datasheet

  • IRF640FP - N-Channel MOSFET (STMicroelectronics)
  • IRF640 - N-channel TrenchMOS transistor (NXP)
  • IRF640 - N-Channel MOSFET (STMicroelectronics)
  • IRF640 - Power MOSFET (International Rectifier)
  • IRF640 - 200V N-Channel MOSFET (Fairchild Semiconductor)
  • IRF640 - N-Channel Enhancement Mode Power MOS Transistors (Comset Semiconductors)
  • IRF640 - Power MOSFET (Vishay)
  • IRF640 - N-CHANNEL MOSFET (BLUE ROCKET ELECTRONICS)
  • IRF640 - N-Channel Power MOSFET (nELL)
  • IRF640 - N-Channel Enhancement Mode POWER MOSFET (WEITRON)
Other Datasheets by Inchange Semiconductor
  • IRF640 - N-Channel MOSFET Transistor
  • IRF640A - N-Channel Mosfet Transistor
  • IRF641 - N-Channel Mosfet Transistor
  • IRF642 - N-Channel Mosfet Transistor
  • IRF643 - N-Channel Mosfet Transistor
  • IRF644A - N-Channel Mosfet Transistor
  • IRF645 - N-Channel Mosfet Transistor
  • IRF646 - N-Channel Mosfet Transistor

Full PDF Text Transcription

Click to expand full text
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF640FI FEATURES ·Low RDS(on) = 0.180Ω(TYP) ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 200 ±20 V V ID Drain Current-Continuous 10 A IDM Drain Current-Single Pluse 40 A PD Total Dissipation @TC=25℃ 40 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.
Published: |