IRF822FI Key Features
- Lower Input Capacitance -Improved Gate Charge -Extended Safe Operating Area -Rugged Gate Oxide Technology
- Part: IRF822FI
- Manufacturer: Inchange Semiconductor (official site)
- Size: 60.00 KB
Other IRF822FI Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
STMicroelectronics |
IRF822FI | (IRF820 / IRF822) N-Channel Enhancement Mode Power MOS Transistors |
ART CHIP |
IRF822 | N-Channel Power MOSFET |
Fairchild |
IRF822 | N-Channel Power MOSFET |
Samsung Semiconductor |
IRF822 | N-Channel Power MOSFET |
|
STMicroelectronics |
IRF822 | (IRF820 / IRF822) N-Channel Enhancement Mode Power MOS Transistors |
IRF822FI Description
·Designed for use in switch mode power supplies and general purpose applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 500 ±20 V V ID Drain Current-Continuous 1.9 A IDM Drain Current-Single Pluse 7.6 A PD Total Dissipation @TC=25℃ 35 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL...