IRF841FI Key Features
- Lower Input Capacitance -Improved Gate Charge -Extended Safe Operating Area -Rugged Gate Oxide Technology
- Part: IRF841FI
- Manufacturer: Inchange Semiconductor (official site)
- Size: 60.02 KB
Other IRF841FI Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
STMicroelectronics |
IRF841FI | N-CHANNEL POWER MOS TRANSISTORS |
|
STMicroelectronics |
IRF841 | N-CHANNEL POWER MOS TRANSISTORS |
International Rectifier |
IRF841 | N-Channel Power MOSFET |
Fairchild |
IRF841 | N-Channel Power MOSFET |
ART CHIP |
IRF841 | N-Channel Power MOSFET |
IRF841FI Description
·Designed for use in switch mode power supplies and general purpose applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 450 ±20 V V ID Drain Current-Continuous 4.5 A IDM Drain Current-Single Pluse 32 A PD Total Dissipation @TC=25℃ 40 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL...