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Inchange Semiconductor

IRF843 Datasheet Preview

IRF843 Datasheet

N-Channel MOSFET Transistor

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF843
FEATURES
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
·Rugged Gate Oxide Technology
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
450
±20
V
V
ID Drain Current-Continuous
7A
IDM Drain Current-Single Pluse
28 A
PD Total Dissipation @TC=25
125 W
TJ
Max. Operating Junction Temperature
-55~150
Tstg Storage Temperature
-55~150
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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www.fineprint.cn




Inchange Semiconductor

IRF843 Datasheet Preview

IRF843 Datasheet

N-Channel MOSFET Transistor

No Preview Available !

INCHANGE Semiconductor
isc Product Specification
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX UNIT
1 /W
80 /W
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn


Part Number IRF843
Description N-Channel MOSFET Transistor
Maker Inchange Semiconductor
Total Page 3 Pages
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