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IRFP251 Datasheet N-Channel MOSFET Transistor

Manufacturer: Inchange Semiconductor

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General Description

·Designed for use in switch mode power supplies and general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 150 ±20 V V ID Drain Current-Continuous 33 A IDM Drain Current-Single Pluse 130 A PD Total Dissipation @TC=25℃ 180 W TJ Max.

Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.7 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 30 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP251 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;

Overview

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product.

Key Features

  • Drain Current.
  • ID= 33A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 150V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.085Ω(Max).
  • Fast Switching.

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