IRFP252 Datasheet N-Channel MOSFET Transistor

Manufacturer: Inchange Semiconductor

IRFP252 n-channel mosfet transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	IRFP252
Manufacturer	Inchange Semiconductor
File Size	236.13 KB
Description	N-Channel MOSFET Transistor
Datasheet	IRFP252 Datasheet

General Description

·Designed for use in switch mode power supplies and general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 27 A IDM Drain Current-Single Pluse 110 A PD Total Dissipation @TC=25℃ 180 W TJ Max.

Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-a Thermal Resistance, Junction to Ambient MAX 0.7 30 UNIT ℃/W ℃/W IRFP252 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;

Overview

isc N-Channel MOSFET Transistor.

Key Features

Drain Current.
ID= 27A@ TC=25℃.
Drain Source Voltage- : VDSS= 200V(Min).
Static Drain-Source On-Resistance : RDS(on) = 0.12Ω(Max).
Fast Switching.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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