IRFP352 - N-Channel MOSFET Transistor

Inchange Semiconductor

IRFP352 Datasheet Preview — Preview of IRFP352 PDF

Datasheet Details

Part number	IRFP352
Manufacturer	Inchange Semiconductor
File Size	236.62 KB
Description	N-Channel MOSFET Transistor
Datasheet	IRFP352-InchangeSemiconductor.pdf

IRFP352 Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 400 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 13 A IDM Drain Current-Single Pluse 52 A PD Total Dissipation @TC=25℃ 150 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal R

Features

Drain Current.
ID= 13A@ TC=25℃.
Drain Source Voltage- : VDSS= 400V(Min).
Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max).
Fast Switching.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Nov 7, 2016 |