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Inchange Semiconductor

IRFW450 Datasheet Preview

IRFW450 Datasheet

N-Channel MOSFET Transistor

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFW450
FEATURES
·Drain Current ID= 14A@ TC=25
·Drain Source Voltage-
: VDSS= 500V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.4Ω (Max)
·Fast Switching
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage-Continuous
ID Drain Current-Continuous
IDM Drain Current-Single Pluse
PD Total Dissipation @TC=25
TJ Max. Operating Junction Temperature
Tstg Storage Temperature
VALUE UNIT
500 V
±20
V
14 A
56 A
180 W
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
0.69
30
UNIT
/W
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




Inchange Semiconductor

IRFW450 Datasheet Preview

IRFW450 Datasheet

N-Channel MOSFET Transistor

No Preview Available !

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFW450
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
VSD Forward On-Voltage
VDS= VGS; ID= 0.25mA
VGS= 10V; ID= 7.9A
VGS= ±20V;VDS= 0
VDS= 500V; VGS= 0
VDS= 400V; VGS= 0; Tj= 150
IS= 14A; VGS= 0
MIN MAX UNIT
500 V
24V
0.4 Ω
±100
nA
250
1000
μA
1.4 V
·
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark


Part Number IRFW450
Description N-Channel MOSFET Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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