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ISC60NM60L - N-Channel MOSFET Transistor

ISC60NM60L Product details

Description

motor drive, DC-DC converter, power switch and solenoid drive.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 60 A IDM Drain Current-Single Pluse 180 A PD Total Dissipation @TC=25℃ 320 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junc.

Features

  • Drain Current : ID= 60A@ TC=25℃
  • Drain Source Voltage : VDSS= 600V(Min)
  • Static Drain-Source On-Resistance : RDS(on) = 65mΩ(Max) @VGS=10V
  • 100% avalanche tested
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
  • motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID D

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Datasheet Details

Part number
ISC60NM60L
Manufacturer
Inchange Semiconductor
File Size
330.87 KB
Datasheet
ISC60NM60L-InchangeSemiconductor.pdf
Description
N-Channel MOSFET Transistor

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N-Channel MOSFET Transistor Inchange Semiconductor
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