Datasheet Details
| Part number | ISF40NF20 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 264.72 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | ISF40NF20-InchangeSemiconductor.pdf |
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Overview: isc N-Channel MOSFET Transistor.
| Part number | ISF40NF20 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 264.72 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | ISF40NF20-InchangeSemiconductor.pdf |
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·Drain Current –ID= 40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.06Ω(Max) ·Fast Switching Speed ·Low Drive Requirement ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 40 A Ptot Total Dissipation@TC=25℃ 40 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~150 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.1 ℃/W ISF40NF20 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
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