Datasheet Details
| Part number | K1941 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 64.63 KB |
| Description | N-Channel MOSFET Transistor |
| Download | K1941 Download (PDF) |
|
|
Overview: INCHANGE Semiconductor isc N-Channel MOSFET Transistor.
| Part number | K1941 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 64.63 KB |
| Description | N-Channel MOSFET Transistor |
| Download | K1941 Download (PDF) |
|
|
|
·Drain Current –ID=16A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed isc Product Specification 2SK1941 APPLICATIONS ·Switching regulator ·UPS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 16 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 1.25 ℃/W 30 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) isc Product Specification 2SK1941 SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID=1mA 600 V VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VDS= VGS;
| Part Number | Description |
|---|---|
| K1938 | 2SK1938 |