Datasheet4U Logo Datasheet4U.com

KSC5022 - Silicon NPN Power Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V(Min) High Switching Speed Wide Area of Safe Operation APPLICATIONS Switching regulators General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
KSC5022 NPN Epitaxial Silicon Transistor Samsung semiconductor
KSC5020 NPN Epitaxial Silicon Transistor Samsung semiconductor
KSC5020 NPN Epitaxial Silicon Transistor Fairchild Semiconductor
KSC5020 NPN Epitaxial Silicon Transistor Samsung semiconductor
KSC5021 NPN Epitaxial Silicon Transistor Fairchild Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
KSC5023 Silicon NPN Power Transistor
KSC5024 Silicon NPN Power Transistor
KSC5025 Silicon NPN Power Transistor
KSC5026 Silicon NPN Power Transistor
KSC5028 Silicon NPN Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSC5022 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Switching regulators ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base voltage 7V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 1.5 A 60 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.