KSC5022 Silicon NPN Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSC5022 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V(Min). High Switching Speed. Wide Area of Safe Operation APPLICATIONS. Switchin.

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Datasheet Specifications

Part number: KSC5022
Manufacturer: Inchange Semiconductor
File Size: 208.35 KB
Datasheet: KSC5022-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Switching regulators
* General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base voltage 7V IC Collector Current-Continuous 4 A ICM Collector Current-P

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KSC5022 Silicon NPN Power Transistor Inchange Semiconductor

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