Datasheet Details
| Part number | KSD1408 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.92 KB |
| Description | Silicon NPN Power Transistor |
| Download | KSD1408 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor KSD1408.
| Part number | KSD1408 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.92 KB |
| Description | Silicon NPN Power Transistor |
| Download | KSD1408 Download (PDF) |
|
|
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·Low Collector Saturation Voltage : VCE(sat)= 1.5V(Max)@ IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Complement to Type KSB1017 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.4 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor KSD1408 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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KSD1408 | NPN Transistor | Fairchild Semiconductor |
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