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KSD1408 Datasheet Preview

KSD1408 Datasheet

Silicon NPN Power Transistor

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isc Silicon NPN Power Transistor
KSD1408
DESCRIPTION
·Low Collector Saturation Voltage
: VCE(sat)= 1.5V(Max)@ IC= 3A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V (Min)
·Complement to Type KSB1017
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
0.4
A
25
W
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.cn
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Inchange Semiconductor

KSD1408 Datasheet Preview

KSD1408 Datasheet

Silicon NPN Power Transistor

No Preview Available !

isc Silicon NPN Power Transistor
KSD1408
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
VBE(on) Base-Emitter On Voltage
IC= 3A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.5A; VCE= 5V
hFE-2
DC Current Gain
IC= 3A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V, ftest= 1MHz
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 5V
MIN TYP. MAX UNIT
80
V
1.5
V
1.5
V
30 μA
0.1 mA
40
240
15
90
pF
8
MHz
hFE classifications
R
O
Y
40-80 70-140 120-240
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark


Part Number KSD1408
Description Silicon NPN Power Transistor
Maker Inchange Semiconductor
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