Datasheet Details
| Part number | KSD288 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 134.96 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
 KSD288 Datasheet
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| Part number | KSD288 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 134.96 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
KSD288 Datasheet
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·Collector-Base Breakdown Voltage- : V(BR)CBO= 80V(Min) ·Collector Current- IC= 3A ·Collector Power Dissipation- : PC= 25W@ TC= 25℃ APPLICATIONS ·Power regulator ·Low frequency high power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 55 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD362 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 0.5mA;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.5mA;
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
KSD288 | Power Regulator Low Frequency High Power Amplifier | Fairchild Semiconductor |
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