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KSD5012 - Silicon NPN Power Transistor

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Datasheet Details

Part number KSD5012
Manufacturer Inchange Semiconductor
File Size 131.63 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet KSD5012-InchangeSemiconductor.pdf

KSD5012 Product details

Description

High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6V IC Collector Current- Continuous 5 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Tem

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