KSD5012 Description
·High Breakdown Voltage- : IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A ICBO Collector Cutoff Current VCB= 800V.
- Part: KSD5012
- Manufacturer: Inchange Semiconductor (official site)
- Size: 131.63 KB
KSD5012 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
·High Breakdown Voltage- : IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A ICBO Collector Cutoff Current VCB= 800V.