KSD5013 Description
·High Breakdown Voltage- : IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICBO Collector Cutoff Current VCB= 800V.
KSD5013 Datasheet
| Part number | KSD5013 |
|---|---|
| Download | KSD5013 Datasheet (PDF) |
| File Size | 131.88 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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