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Inchange Semiconductor

KSD5013 Datasheet Preview

KSD5013 Datasheet

Silicon NPN Power Transistor

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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSD5013
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
·High Reliability
·Built-in Damper Diode
APPLICATIONS
·Designed for color TV horizontal output applicaitions
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current- Continuous
6
A
ICP Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
16 A
60 W
150
Tstg Storage Temperature Range
-55~150
isc websitewww.iscsemi.cn
1




Inchange Semiconductor

KSD5013 Datasheet Preview

KSD5013 Datasheet

Silicon NPN Power Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSD5013
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 1A
ICBO Collector Cutoff Current
VCB= 800V ; IE= 0
IEBO Emitter Cutoff Current
VEB= 4V ; IC= 0
hFE DC Current Gain
IC= 1A ; VCE= 5V
fT Current-Gain—Bandwidth Product
VECF
C-E Diode Forward Voltage
tf Fall Time
IC= 1A; VCE= 10V
IF= 6A
IC= 5A , IB1= 1A ; IB2= -2A
RL= 40Ω; VCC= 200V
MIN TYP. MAX UNIT
5.0 V
1.5 V
10 μA
40 130 mA
8
3 MHz
2.0 V
0.4 μs
isc websitewww.iscsemi.cn
2


Part Number KSD5013
Description Silicon NPN Power Transistor
Maker Inchange Semiconductor
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KSD5013 Datasheet PDF






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