KSD5013
KSD5013 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High Breakdown Voltage-
: VCBO= 1500V (Min)
- High Switching Speed
- High Reliability
- Built-in Damper Diode
APPLICATIONS
- Designed for color TV horizontal output applicaitions
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
800 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current- Continuous
ICP Collector Current-Peak
Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
16 A 60 W 150 ℃
Tstg Storage Temperature Range
-55~150
℃ isc website：.iscsemi.cn
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=...
