silicon pnp power transistors.
*Designed for high voltage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Col.
*High Collector-Emitter Breakdown Voltage
VCEO= -180V(Min)
*Complement to Type KTC4370A
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for high voltage applications
ABSOLUT.
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