KTB2510 - Silicon PNP Power Transistors

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= -2.5V(Max) @IC= -7A High DC Current Gain : hFE= 5000(Min) @ IC= -7A, VCE= -4V Complement to Type KTD1510 APPLICATIONS High power amplifier applications Recomme

Inchange Semiconductor

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Datasheet Details

Part number	KTB2510
Manufacturer	Inchange Semiconductor
File Size	146.19 KB
Description	Silicon PNP Power Transistors
Datasheet	KTB2510 Datasheet
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INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification KTB2510 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.

Published: Nov 14, 2016 |