KTB2510 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.5V(Max) @IC= -7A ·High DC Current Gain.
KTB2510 datasheet by Inchange Semiconductor.
| Part number | KTB2510 |
|---|---|
| Datasheet | KTB2510-InchangeSemiconductor.pdf |
| File Size | 146.19 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon PNP Power Transistors |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.5V(Max) @IC= -7A ·High DC Current Gain.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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KTB2510 | EPITAXIAL PLANAR PNP TRANSISTOR | KEC |
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