KTD1414 transistors equivalent, silicon npn power transistors.
*Switching applications
*Hammer driver,pulse motor driver applications
*Power amplifier applications.
ABSOL.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
*Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 3A
*High DC Current Gain
: hFE= 2000(Min) @ IC= 1A, VCE= 2V
*Minimum Lot-to-Lot variations for robust device
.
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