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Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR10150
FEATURES ·Metal silicon junction,majority carrier conduction ·Low Power Loss/High Efficiency ·High current capability,low forward voltage drop ·High surge capability ·Guardring for overvoltage protection ·High temperature soldering guaranteed ·RoHS product ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low-voltage,high frequency inverters,free wheeling
and polarrity protection applications .