MBR1035 Datasheet | Inchange Semiconductor

Features - Schottky Barrier Chip - Guard Ring Die Construction for Transient Protection - Low Power Loss/High Efficiency - High Surge Capability - High Current Capability，Low Forward Voltage Drop - Plastic Material：UL Flammability - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for low-voltage,high frequency inverters，free wheeling and polarrity protection applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VR(RMS) RMS Reverse Voltag IF(AV) IFSM Average Rectified Forward Current (Rated VR) TC= 125℃ Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60Hz) 35 24.5 10 150 TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ dv/dt Voltage Rate of...