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MBR3045PT Datasheet

Schottky Barrier Rectifier

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INCHANGE Semiconductor
Schottky Barrier Rectifier
Product Specification
MBR3045PT
FEATURES
·Dual Rectifier Conduction
·High Surge Capacity
·High Current Capability, Low Forward Voltage Drop
·Guarding for Overvoltage protection
APPLICATIONS
·For use in low voltage,high frequency inverters,free wheeling,
and polarity protection applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
IF(AV)
IFSM
TJ
Peak Repetitive Reverse Voltage
45
Average Rectified Forward Current
TC= 100
Nonrepetitive Peak Surge Current
8.3ms single half sine-wave
superimposed on rated load conditions
30
200
Junction Temperature
-55~150
V
A
A
Tstg Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
MAX
6.8
UNIT
/W
ELECTRICAL CHARACTERISTICS(Pulse Test: Pulse Width300μs,Duty Cycle2%)
SYMBOL
PARAMETER
CONDITIONS
MAX
VF Maximum Instantaneous Forward Voltage
IR Maximum Instantaneous Reverse Current
Note: Pulse test: 300μs pulse width, 1% duty cycle
IF= 15A ; TC= 125
IF= 30A ; TC= 25
IF= 30A ; TC= 125
Rated DC blocking Voltage,TC= 25
Rated DC blocking Voltage, TC= 125
0.57
0.84
0.72
1.0
60
UNIT
V
mA
isc websitewww.iscsemi.cn


Part Number MBR3045PT
Description Schottky Barrier Rectifier
Maker Inchange Semiconductor
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