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Inchange Semiconductor

MBR3045WT Datasheet Preview

MBR3045WT Datasheet

Schottky Barrier Rectifier

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Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR3045WT
FEATURES
·Dual diode construction;terminals 1 and 3 may be connected
for parallel operation at full rating
·Low forward voltage
·Guarding for stress protection
·150operating junction temperature
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
MECHANICAL CHARACTERISTICS
·Case: Epoxy, Molded
·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
·Lead Temperature for Soldering Purposes: 260Max.
for 10 Seconds
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
IF(AV)
IFSM
IRRM
TJ
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
45
Average Rectified Forward Current (Per Leg)
(Total)
15
30
Peak Forward Surge Current, 8.3 ms single
halfsine-wave superimposed on rated load
(JEDEC method)
Peak Repetitive Reverse Surge Current
(2.0μs, 1.0kHz)
200
2.0
Junction Temperature
-65~175
V
A
A
A
Tstg Storage Temperature Range
-65~175
dv/dt Voltage Rate of Change (Rated VR)
10,000 V/μs
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




Inchange Semiconductor

MBR3045WT Datasheet Preview

MBR3045WT Datasheet

Schottky Barrier Rectifier

No Preview Available !

Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR3045WT
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
Rth j-a
Thermal Resistance,Junction to Ambient
MAX
1.4
40
UNIT
/W
/W
ELECTRICAL CHARACTERISTICS(Pulse Test: Pulse Width300μs,Duty Cycle1%)
SYMBOL
PARAMETER
CONDITIONS
IF= 20A, TC= 125
VF Maximum Instantaneous Forward Voltage IF= 30A, TC= 25
IF= 30A, TC= 125
IR
Maximum Instantaneous Reverse Current
Rated DC Voltage, TC= 25
Rated DC Voltage, TC= 125
MAX
0.60
0.76
0.72
0.1
10
UNIT
V
mA
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number MBR3045WT
Description Schottky Barrier Rectifier
Maker Inchange Semiconductor
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