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Inchange Semiconductor

MBR6045WT Datasheet Preview

MBR6045WT Datasheet

Schottky Barrier Rectifier

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Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR6045WT
FEATURES
·Low Forward Voltage
·Guard -Ring for Stress Protection
·High Surge Capability
·175Operating Junction Temperature
·Pb-Free Package is Available
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
MECHANICAL CHARACTERISTICS
·Case: Epoxy, Molded
·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
·Lead Temperature for Soldering Purposes: 260Max.
for 10 Seconds
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
IF(AV)
IFSM
IRRM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC= 125Per Diode
Per Device
Nonrepetitive Peak Surge Current
8.3ms single half sine-wave superimposed
on rated load conditions
Peak Repetitive Reverse Surge Current
(20μs, 1.0kHz)
45
30
60
500
2.0
V
A
A
A
TJ Junction Temperature
-65~175
Tstg Storage Temperature Range
-65~175
dv/dt Voltage Rate of Change (Rated VR)
10,000 V/μs
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




Inchange Semiconductor

MBR6045WT Datasheet Preview

MBR6045WT Datasheet

Schottky Barrier Rectifier

No Preview Available !

Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR6045WT
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
MAX
1.0
UNIT
/W
ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle2.0%)
SYMBOL
PARAMETER
CONDITIONS
IF= 30A ; Tc= 25
VF Maximum Instantaneous Forward Voltage IF= 30A ; Tc= 125
IF= 60A ; Tc= 25
VR= VRWM;Tc= 25
IR Maximum Instantaneous Reverse Current
VR= VRWM;Tc= 125
MAX
0.62
0.55
0.75
1.0
10
UNIT
V
mA
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number MBR6045WT
Description Schottky Barrier Rectifier
Maker Inchange Semiconductor
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MBR6045WT Datasheet PDF






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