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Inchange Semiconductor

MBRB20100CT Datasheet Preview

MBRB20100CT Datasheet

Schottky Barrier Rectifier

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Schottky Barrier Rectifier
INCHANGE Semiconductor
MBRB20100CT
FEATURES
·Schottky barrier chip
·Low Power Loss,High Efficiency
·Guard ring for transient protection
·High Operating Junction Temperature
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·For use in high frequency rectifier of switching mode
power supplies,freewheeling diodes,DC-to-DC converters
or polarity protection application.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRMS
VR
IF(AV)
Peak Repetitive Reverse Voltage
RMS Voltage
DC Blocking Voltage
Average Rectified Forward Current
100 V
20 A
Nonrepetitive Peak Surge Current
IFSM 8.3ms single half sine-wave superimposed on 150
rated load conditions
A
TJ Junction Temperature
-65~150
Tstg Storage Temperature Range
-65~175
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




Inchange Semiconductor

MBRB20100CT Datasheet Preview

MBRB20100CT Datasheet

Schottky Barrier Rectifier

No Preview Available !

Schottky Barrier Rectifier
INCHANGE Semiconductor
MBRB20100CT
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
MAX
2.0
UNIT
/W
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
IF=10A ; Tj=25
VF
Maximum
Voltage
Instantaneous
Forward
IF=10A ; Tj= 125
IF=20A ; Tj= 25
IF=20A ; Tj= 125
IR
Maximum
Current
Instantaneous
Reverse
VR= VRWM;Tj= 25
VR= VRWM;Tj= 125
TYP MAX UNIT
0.85
0.75
V
0.95
0.85
0.1 mA
6 mA
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number MBRB20100CT
Description Schottky Barrier Rectifier
Maker Inchange Semiconductor
Total Page 2 Pages
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