MJ11016 Description
·Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 20A ·Low Collector Saturation Voltage-.
- Part: MJ11016
- Manufacturer: Inchange Semiconductor (official site)
- Size: 207.75 KB
MJ11016 is Silicon NPN Darlington Power Transistor manufactured by Inchange Semiconductor .
·Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 20A ·Low Collector Saturation Voltage-.