MJ3773 transistor equivalent, silicon npn power transistor.
*Designed for power amplifier and switching applications.
*For ultimate circuit performance based on the design .
*Low Collector-Emitter Saturation VoltageVce(sat)=0.8V(Max)@Ic=10A
*Low Leakage Icbo=1mA(max)@140V
*High Current-Gain-Bandwidth ProductfT=1MHz(min)@Ic=1A APPLICATIONS
*Designed for power amplifier and switching applications.
*For .
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