MJ6308 - Silicon NPN Power Transistor

Inchange Semiconductor

General Description

700V Collector-Base Breakdown Capability Excellent Dynamic Saturation Characteristics Fast swithing Low Saturation Voltage Advanced Technology Replacement for the 2N6308 APPLICATIONS Designed in circuits requiring good dynamio saturation characteristics in swithing powe

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Datasheet Details

Part number	MJ6308
Manufacturer	Inchange Semiconductor
File Size	110.81 KB
Description	Silicon NPN Power Transistor
Datasheet	MJ6308 Datasheet

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www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION ·700V Collector-Base Breakdown Capability ·Excellent Dynamic Saturation Characteristics ·Fast swithing ·Low Saturation Voltage ·Advanced Technology Replacement for the 2N6308 APPLICATIONS ·Designed in circuits requiring good dynamio saturation characteristics in swithing power supply applications and other inductive swithing circuits.