Datasheet Details
| Part number | MJB45H11 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.35 KB |
| Description | Silicon PNP Power Transistor |
| Download | MJB45H11 Download (PDF) |
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| Part number | MJB45H11 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.35 KB |
| Description | Silicon PNP Power Transistor |
| Download | MJB45H11 Download (PDF) |
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|
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·Low Collector-Emitter saturation voltage ·Pb-free package are available ·Fast switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General purpose amplification and switching such as out or driver stages in applications such as switching regulators,converters and power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICP Collector Current-Pulse PC Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -20 A 2 W 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ MJB45H11 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor MJB45H11 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=- 30mA;
IB= 0 VCE(sat) VBE(sat) ICEO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current IC=-8A;
IB=- 400mA IC=-8A;
isc Silicon PNP Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
MJB45H11 | PNP Transistor | ON Semiconductor |
|
MJB45H11G | PNP Transistor | ON Semiconductor |
| Part Number | Description |
|---|---|
| MJB41C | Silicon NPN Power Transistor |
| MJB42C | Silicon PNP Power Transistor |
| MJB44H11 | Silicon NPN Power Transistor |