MJD340
MJD340 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector- Emitter Sustaining Voltage-
: VCEO(SUS) = 300 V(Min)
- Low Collector Saturation Voltage-
: VCE(sat) = 1.0V(Max.)@ IC= 50m A
- DPAK for Surface Mount Applications
- plement to Typ MJD350
- Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
- Designed for line operated audio output amplifier,switchmode power supply drivers and other switching applications..
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300 V
VCEO
Collector-Emitter Voltage
300 V
VEBO
Emitter-Base Voltage
3V
IC Collector Current-Continuous
0.5 A
ICM Collector Current-Peak
Collector Power Dissipation
TC=25℃ Collector Power Dissipation
Ta=25℃
Ti Junction Temperature
Tstg Storage Temperature Range
0.75 15 1.56 150 -65~150
A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal...
