MJD340 transistor equivalent, silicon npn power transistor.
*Complement to Typ MJD350
*Minimum Lot-to-Lot variations for robust device performance
and reliable operation AP.
*Collector
–Emitter Sustaining Voltage-
: VCEO(SUS) = 300 V(Min)
*Low Collector Saturation Voltage-
: VCE(sat) = 1.0V(Max.)@ IC= 50mA
*DPAK for Surface Mount Applications
*Complement to Typ MJD350
*Minimum Lot-to-Lo.
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