High DC Current Gain
: hFE = 1000(Min)@ IC= 5A
Low Collector-Emitter Saturation Voltage
: VCE(sat) = 1.5V(Max)@ IC= 5A
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
Designed for general-purpose amplifier and low-speed switching a
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isc Silicon NPN Darlington Power Transistor
MJD44E3
DESCRIPTION ·High DC Current Gain
: hFE = 1000(Min)@ IC= 5A ·Low Collector-Emitter Saturation Voltage
: VCE(sat) = 1.5V(Max)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃
Tj
Junction Temperature
10
A
20 W
1.
MJD44E3 Datasheet
