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MJD44E3 - Silicon NPN Power Transistor

MJD44E3 Description

isc Silicon NPN Darlington Power Transistor MJD44E3 .
High DC Current Gain : hFE = 1000(Min)@ IC= 5A. Low Collector-Emitter Saturation Voltage : VCE(sat) = 1. Minimum Lot-to-L.

MJD44E3 Applications

* Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous Collector Power Dissipation @TC=25℃ PC Colle

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Datasheet Details

Part number
MJD44E3
Manufacturer
Inchange Semiconductor
File Size
265.30 KB
Datasheet
MJD44E3-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
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