MJE13005F
MJE13005F is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector- Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.)
- Collector Saturation Voltage
: VCE(sat) = 0.6(Max) @ IC= 2.0A
- Switching Time
: tf= 0.9μs(Max.)@ IC= 2.0A
APPLICATIONS
- Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters,Motor controls,Solenoid/Relay drivers and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCEV
Collector-Emitter Voltage
VALUE 700
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
ICM Collector Current-peak
IB Base Current
IBM Base Current-Peak
IE Emitter Current
IEM Emitter Current-Peak
Collector Power Dissipation
Ta=25℃ Collector Power Dissipation
TC=25℃
Ti Junction Temperature
12 2 75 150
Tstg Storage Temperature...
