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MJE170 - Silicon PNP Power Transistors

General Description

Collector Emitter Sustaining Voltage : VCEO(SUS) = -40V DC Current Gain : hFE = 30(Min) @ IC= -0.5 A = 12(Min) @ IC= -1.5 A Complement to the NPN MJE180 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = -40V ·DC Current Gain— : hFE = 30(Min) @ IC= -0.5 A = 12(Min) @ IC= -1.5 A ·Complement to the NPN MJE180 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low power audio amplifier applications. ·Low current high speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-peak -6 A IB Base Current Collector Power Dissipation PC Ta=25℃ Collector Power Dissipation TC=25℃ Ti Junction Temperature -1 A 1.5 W 12.