MJE182G
MJE182G is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector- Emitter Sustaining Voltage-
: VCEO(SUS) = 80 V
- DC Current Gain-
: h FE = 30(Min) @ IC= 0.5 A = 12(Min) @ IC= 1.5 A
- plement to the PNP MJE172G
- Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
- Low power audio amplifier
- Low current high speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100 V
VCEO
Collector-Emitter Voltage
80 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
3A
ICM Collector Current-peak
6A
IB Base Current
Collector Power Dissipation
Ta=25℃ Collector Power Dissipation
TC=25℃
Ti Junction Temperature
Tstg Storage Temperature Range
1 1.5 12.5 150 -65~150
A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX...