MJE350
MJE350 is Silicon PNP Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector- Emitter Sustaining Voltage-
: VCEO(SUS) = -300 V(Min)
- DC Current Gain-
: h FE = -100(Min) @ IC= -50m A
- Low Collector Saturation Voltage-
: VCE(sat) = -1.0V(Max.)@ IC= -50m A
- plement to the NPN MJE340
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for high voltage and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-300
VCEO
Collector-Emitter Voltage
-300
VEBO
Emitter-Base Voltage
-3
Collector Current-Continuous
Collector Power Dissipation TC=25℃
Ti
Junction Temperature
-0.5
℃
Tstg
Storage Temperature...
