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MMBR931L - Silicon NPN RF Transistor

General Description

NF = 4.3 dB TYP.

Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed primarily for use in low-power amplifiers to 1.0 GHz ,Ideal for pagers and other battery operated systems wher

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isc Silicon NPN RF Transistor INCHANGE Semiconductor MMBR931L DESCRIPTION ·Low Noise Figure NF = 4.3 dB TYP. @VCE = 1 V, IE = 0.25 mA, f = 1 GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed primarily for use in low-power amplifiers to 1.0 GHz ,Ideal for pagers and other battery operated systems where power consumption is critical. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 10 V VCEO Collector-Emitter Voltage 5 V VEBO Emitter-Base Voltage 2 V IC Collector Current-Continuous PC Collector Power Dissipation @TC= 75℃ TJ Junction Temperature 5 mA 0.15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.