NVD5C668NL Datasheet | Inchange Semiconductor

Features - Drain Current : ID= 49A@ TC=25℃ - Drain Source Voltage : VDSS= 60V(Min) - Static Drain-Source On-Resistance : RDS(on) = 8.9mΩ(Max) @ VGS= 10V - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION - motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage Gate-Source Voltage-Continuous ±20 Drain Current-Continuous Total Dissipation @TC=25℃ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 2.84 UNIT ℃/W NVD5C668NL isc website：.iscsemi. 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown...