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PMD1601K - Silicon NPN Darlingtion Power Transistor

General Description

High DC current gain Collector-Emitter Breakdown VoltageV(BR)CEO= 60V(Min) Complement to type PMD1701K APPLICATIONS Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL VCBO VCEO VEBO IC ICP IB B PARAMETER Coll

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www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD1601K DESCRIPTION ·High DC current gain ·Collector-Emitter Breakdown VoltageV(BR)CEO= 60V(Min) ·Complement to type PMD1701K APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL VCBO VCEO VEBO IC ICP IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Current-Peak Base Current Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE 60 60 5.0 20 40 0.