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PMD1601K - Silicon NPN Darlingtion Power Transistor

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Datasheet Details

Part number PMD1601K
Manufacturer Inchange Semiconductor
File Size 111.68 KB
Description Silicon NPN Darlingtion Power Transistor
Datasheet download datasheet PMD1601K_InchangeSemiconductor.pdf

PMD1601K Product details

Description

High DC current gain Collector-Emitter Breakdown VoltageV(BR)CEO= 60V(Min) Complement to type PMD1701K APPLICATIONS Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL VCBO VCEO VEBO IC ICP IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Current-Peak Base Current Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temp

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