PMD1603K Overview
IB= 0 100 V V(BR)CER Collector-Emitter Breakdown Voltage IC= 100mA; RBE= 2.2kΩ 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 40mA 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A;.
| Part number | PMD1603K |
|---|---|
| Datasheet | PMD1603K Datasheet PDF (Download) |
| File Size | 111.70 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Darlingtion Power Transistor |
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IB= 0 100 V V(BR)CER Collector-Emitter Breakdown Voltage IC= 100mA; RBE= 2.2kΩ 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 40mA 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A;.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| PMD1603K | COMPLEMENTARY POWER DARLINGTON TRANSISTORS | Central Semiconductor |