PSMN5R6-100BS - N-Channel MOSFET Transistor

Inchange Semiconductor

PSMN5R6-100BS Datasheet Preview — Preview of PSMN5R6-100BS PDF

Datasheet Details

Part number	PSMN5R6-100BS
Manufacturer	Inchange Semiconductor
File Size	356.42 KB
Description	N-Channel MOSFET Transistor
Datasheet	PSMN5R6-100BS-InchangeSemiconductor.pdf

PSMN5R6-100BS Product details

Description

motor drive, DC-DC converter, power switch and solenoid drive.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 95 A IDM Drain Current-Single Pluse 539 A PD Total Dissipation @TC=25℃ 306 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junc

Features

Drain Current : ID= 100A@ TC=25℃.
Drain Source Voltage : VDSS= 100V(Min).
Static Drain-Source On-Resistance : RDS(on) = 5.6mΩ(Max) @ VGS= 10V.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Sep 14, 2022 |