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Q6006DH3 Datasheet Thyristors

Manufacturer: Inchange Semiconductor

Overview: isc Thyristors Q6006DH3.

General Description

·With TO-252( DPAK ) uninsulated packaging ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RSM) Average on-state current ITSM Surge non-repetitive on-state current PG(AV) Tj Tstg Average gate power dissipation Operating junction temperature Storage temperature 60HZ 50HZ MAX 600 600 6 65 55 0.4 -40~125 -40~125 UNIT V V A A W ℃ ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VR=VRRM Rated;

VD=VDRM Rated;

Tj=25℃ Tj=100℃ Tj=125℃ VTM On-state voltage IGT Gate-trigger current IT=6A Ⅰ VD =12V;IT=0.1A;

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