Datasheet Details
| Part number | TIP52 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.46 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet |
 TIP52 Datasheet
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| Part number | TIP52 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.46 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet |
TIP52 Datasheet
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·DC Current Gain -hFE = 30~150@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line operated audio output amplifier,and switching power supply drivers applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3.0 A ICM Collector Current-Peak 5.0 A IB Base Current PD Collector Power Dissipation TC=25℃ Tj Junction Temperature 0.6 A 100 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.25 ℃/W isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
isc Silicon NPN Power Transistors TIP52.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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TIP52 | High-Voltage NPN Silicon Power Transistor | Mospec Semiconductor |
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