2SC5803 - Silicon NPN Power Transistor

Description

High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage color display horizontal deflect

Inchange Semiconductor Company

📥 Download Datasheet

Datasheet Details

Part number	2SC5803
Manufacturer	Inchange Semiconductor Company
File Size	178.47 KB
Description	Silicon NPN Power Transistor
Datasheet	2SC5803 Datasheet
Additional preview pages of the 2SC5803 datasheet.

📁 Similar Datasheet

2SC5800 - NPN SILICON RF TRANSISTOR (Renesas)
2SC5801 - NPN TRANSISTOR (NEC)
2SC5802 - Silicon NPN Power Transistors (SavantIC)
2SC5802 - NPN Transistor (INCHANGE)
2SC5804 - SMALL-SIGNAL TRANSISTOR (Isahaya Electronics Corporation)
2SC5807 - Silicon NPN Transistor (Isahaya Electronics Corporation)
2SC5808 - NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)
2SC5809 - Silicon NPN Transistor (Panasonic Semiconductor)
2SC5810 - NPN Transistor (Toshiba Semiconductor)
2SC5811 - NPN TRANSISTOR (Sanyo Semicon Device)

Other Datasheets by Inchange Semiconductor Company

Full PDF Text Transcription

Click to expand full text

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5803 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage color display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 12 A ICM Collector Current- Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 24 A 70 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.

Published: Dec 22, 2009 |