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2SD1603 Datasheet - Inchange Semiconductor Company

2SD1603 Silicon NPN Darlington Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) *High DC Current Gain : hFE= 1000(Min) @IC= 4A *Complement to Type 2SB1103 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for low frequency power amplifiers appl.

2SD1603_InchangeSemiconductorCompany.pdf

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Datasheet Details

Part number:

2SD1603

Manufacturer:

Inchange Semiconductor Company

File Size:

211.12 KB

Description:

Silicon npn darlington power transistor.

2SD1603 Distributor

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2SD1603 Silicon NPN Darlington Power Transistor Inchange Semiconductor Company